STUDY OF PROTON RADIATION EFFECTS ON ANALOG IC DESIGNED FOR HIGH-ENERGY PHYSICS IN A BICMOS-JFET RADHARD SOI TECHNOLOGY

被引：11

作者：

BLANQUART, L

DELPIERRE, P

HABRARD, MC

MEKKAOUI, A

MOUTHUY, T

DENTAN, M

DELAGNES, E

FOURCHES, N

ROUGER, M

TRUCHE, R

DELEVOYE, E

DEPONTCHARRA, J

BLANC, JP

FLAMENT, O

LERAY, JL

MUSSEAU, O

机构：

[1] CENS,DSM,DAPNIA,F-91191 GIF SUR YVETTE,FRANCE

[2] CEA,DTA,LETI,F-38041 GRENOBLE,FRANCE

[3] CEN,CEA,F-91680 BRUYERES CHATEL,FRANCE

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 06期

关键词：

Amplifiers (electronic) - Bipolar transistors - Buffer circuits - CMOS integrated circuits - Computer simulation - Electric current control - Electric network parameters - Electric variables measurement - Protons - Radiation effects - Transconductance - Voltage control;

D O I：

10.1109/23.340611

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present experimental results from a fast charge amplifier and a wideband analog buffer processed in the DMILL BiCMOS-JFET radhard SOI technology and irradiated up to 4.5 x 10(14) protons/cm(2). In parallel, we have irradiated elementary transistors. These components were biased and electrical measurements were done 30 min after beam stop. By evaluating variations of main SPICE parameters, i. e., threshold voltage shift for CMOS and current gain variation for bipolar transistors, we have simulated the wideband analog buffer at different doses. These SPICE simulations are in good agreement with measured circuit degradations. The behavior of the charge amplifier is consistent with extraction of transconductance and pinch-off voltage shift of the PJFET.

引用

页码：2525 / 2529

页数：5

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