STRUCTURAL AND PHYSICAL-PROPERTIES OF THE ASSX SYSTEM

被引：20

作者：

KOSEK, F ^{[1
]}

CHLEBNY, J ^{[1
]}

CIMPL, Z ^{[1
]}

MASEK, J ^{[1
]}

机构：

[1] CZECHOSLOVAK ACAD SCI,INST PHYS,CS-11142 PRAGUE 1,CZECHOSLOVAKIA

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1983年 / 47卷 / 06期

关键词：

D O I：

10.1080/01418638308228268

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：627 / 639

页数：13

共 22 条

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[9] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS
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[10] DEFECT CHEMISTRY OF LONE-PAIR SEMICONDUCTORS
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