THEORETICAL-STUDY OF SUBBAND TRANSITIONS IN STRAIN-INDUCED QUANTUM-WELL WIRES

被引：12

作者：

TAN, IH ^{[1
]}

HE, MY ^{[1
]}

YI, JC ^{[1
]}

HU, E ^{[1
]}

DAGLI, N ^{[1
]}

EVANS, A ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 02期

关键词：

D O I：

10.1063/1.351886

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have modeled the lateral quantum confinement in a GaAs quantum well due to partial strain release on the side walls of an InGaAs stressor located on the top of the well. We used the finite element method to solve both the continuum elasticity equation and the Luttinger four-band Hamiltonian with strain. This model was used to systematically study the wire width dependence of lateral band edge modulation, subband splitting, and relative transition strength in the strain-induced quantum well wire structures.

引用

页码：546 / 552

页数：7

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