CRITICAL ANGLES AND MINIMUM YIELDS FOR PLANAR CHANNELING

被引：20

作者：

ROOSENDAAL, HE ^{[1
]}

KOOL, WH ^{[1
]}

VANDERWE.WF ^{[1
]}

SANDERS, JB ^{[1
]}

机构：

[1] FOM INST ATOOM & MOLECUULFYS, KRUISLAAN 407, AMSTERDAM, NETHERLANDS

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1974年 / 22卷 / 02期

关键词：

Compendex;

D O I：

10.1080/00337577408232152

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

SEMICONDUCTING SILICON

引用

页码：89 / 99

页数：11

共 13 条

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[9] MEASUREMENTS AND CALCULATIONS OF CRITICAL ANGLES FOR PLANAR CHANNELING [J].

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ANDERSEN, JU .

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[10] CHANNELING STUDIES IN DIAMOND-TYPE LATTICES [J].

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