IDENTIFICATION OF DONORS IN VAPOR GROWN INDIUM-PHOSPHIDE

[1] OBSERVATION OF SHALLOW RESIDUAL DONORS IN HIGH-PURITY EPITAXIAL GAAS BY MEANS OF PHOTO-LUMINESCENCE SPECTROSCOPY [J]. SOLID STATE COMMUNICATIONS, 1981, 38 (11) : 1053 - 1056

[2] ARMISTEAD CJ, 1983, LECT NOTES PHYS, V177, P289

[3] THE ROLE OF VAPOR ETCHING IN THE GROWTH OF EPITAXIAL INP [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 60 (02) : 225 - 234

[4] BASS SJ, UNPUB J CRYST GROWTH

[5] CLARKE RC, 1974, J CRYSTAL GROWTH, V28, P166

[6] THE VAPOR-PHASE ETCHING AND N-TYPE DOPING OF INDIUM-PHOSPHIDE [J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 287 - 302

[7] DONOR DISCRIMINATION AND BOUND EXCITON SPECTRA IN INP [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 346 - 359

[8] 2-ELECTRON TRANSITIONS IN LUMINESCENCE OF EXCITONS BOUND TO NEUTRAL DONORS IN GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW LETTERS, 1967, 18 (04) : 122 - &

[9] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1823 - +

[10] FAIRMAN RD, 1977, I PHYS C SERIES B, V33, P45

[1] OBSERVATION OF SHALLOW RESIDUAL DONORS IN HIGH-PURITY EPITAXIAL GAAS BY MEANS OF PHOTO-LUMINESCENCE SPECTROSCOPY [J]. SOLID STATE COMMUNICATIONS, 1981, 38 (11) : 1053 - 1056

[2] ARMISTEAD CJ, 1983, LECT NOTES PHYS, V177, P289

[3] THE ROLE OF VAPOR ETCHING IN THE GROWTH OF EPITAXIAL INP [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 60 (02) : 225 - 234

[4] BASS SJ, UNPUB J CRYST GROWTH

[5] CLARKE RC, 1974, J CRYSTAL GROWTH, V28, P166

[6] THE VAPOR-PHASE ETCHING AND N-TYPE DOPING OF INDIUM-PHOSPHIDE [J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 287 - 302

[7] DONOR DISCRIMINATION AND BOUND EXCITON SPECTRA IN INP [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 346 - 359

[8] 2-ELECTRON TRANSITIONS IN LUMINESCENCE OF EXCITONS BOUND TO NEUTRAL DONORS IN GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW LETTERS, 1967, 18 (04) : 122 - &

[9] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1823 - +

[10] FAIRMAN RD, 1977, I PHYS C SERIES B, V33, P45