CHARACTERIZATION OF INTERFACE REGION IN VPE GAAS

被引：9

作者：

SHIBATOMI, A ^{[1
]}

YOKOYAMA, N ^{[1
]}

ISHIKAWA, H ^{[1
]}

DAZAI, K ^{[1
]}

RYUZAN, O ^{[1
]}

机构：

[1] FUJITSU LABS LTD,1015 NAKAHARA,KAWASAKI,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1975年 / 31卷 / DEC期

关键词：

D O I：

10.1016/0022-0248(75)90136-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：240 / 243

页数：4

共 9 条

[1] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].

BARDEEN, J ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1950, 80 (01) :72-80

[2]

Brooks H., 1955, ADV ELECTRON, V7, P85

[3] MEASUREMENT OF MOBILITY AND CONCENTRATION OF CARRIERS IN DIFFUSED ZONES IN SI WITH A GATE CONTROLLED STRUCTURE [J].

DARWISH, MY .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (07) :397-402

[4]

HAWARTH DJ, 1953, P ROY SOC LOND A MAT, V219, P53

[5]

HUSTON AR, 1961, J APPL PHYS, V32, P2287

[6] VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS IN A NITROGEN ATMOSPHERE [J].

IHARA, M ;

DAZAI, K ;

RYUZAN, O .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) :528-531

[7] ELECTRICAL PROPERTIES OF SILICON FILMS ON SAPPHIRE USING MOS HALL TECHNIQUE [J].

IPRI, AC .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2770-+

[8]

NOZAKI T, 1975, 5TH P INT S GAAS REL, P46

[9]

WEISBERG LR, 1962, J APPL PHYS, V33, P187

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