STABILITY AND SER ANALYSIS OF STATIC RAM CELLS

被引：10

作者：

CHAPPELL, B

SCHUSTER, SE

SAIHALASZ, GA

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 02期

关键词：

D O I：

10.1109/T-ED.1985.21964

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：463 / 470

页数：8

共 8 条

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NAKANO, T .

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[2] WORST-CASE STATIC NOISE MARGIN CRITERIA FOR LOGIC-CIRCUITS AND THEIR MATHEMATICAL EQUIVALENCE [J].

LOHSTROH, J ;

SEEVINCK, E ;

DEGROOT, J .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (06) :803-807

[3]

MAPPER D, 1981, 11TH P INT C SOL STA

[4] ALPHA-PARTICLE-INDUCED SOFT ERRORS IN DYNAMIC MEMORIES [J].

MAY, TC ;

WOODS, MH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (01) :2-9

[5] ALPHA-PARTICLE-INDUCED SOFT ERROR RATE IN VLSI CIRCUITS [J].

SAIHALASZ, GA ;

WORDEMAN, MR ;

DENNARD, RH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :725-731

[6]

SCHUSTER S, 1984, IEEE J SOLID STATE C, V19

[7] ALPHA-PARTICLE TRACKS IN SILICON AND THEIR EFFECT ON DYNAMIC MOS RAM RELIABILITY [J].

YANEY, DS ;

NELSON, JT ;

VANSKIKE, LL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (01) :10-16

[8]

YOSHIMOTO M, 1983, JAPANESE J APPL S221, V22, P69

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