LASER ANNEALING OF SILICON

被引：29

作者：

POATE, JM

BROWN, WL

机构：

来源：

关键词：

D O I：

10.1063/1.2915125

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：24 / 30

页数：7

共 30 条

[1]

APPLETON BR, 1982, LASER ELECTRON BEAM, V4

[2]

Auston D., 1979, AIP C P, V50, P11, DOI [10.1063/1.31651, DOI 10.1063/1.31651]

AYDINLI, A ;

LO, HW ;

LEE, MC ;

COMPAAN, A .

[4] PHASE-TRANSITIONS IN AMORPHOUS SI PRODUCED BY RAPID HEATING [J].

BAERI, P ;

FOTI, G ;

POATE, JM ;

CULLIS, AG .

[5]

BAGLEY BG, 1979, AIP C P, V50, P97

[6]

BIEGELSEN DK, 1981, LASER ELECTRON BEAM, V1, P487

[7]

BLOEMBERGEN N, 1982, LASER ELECTRON BEAM, V4

[8]

CAHN JW, 1980, LASER ELECTRON BEAM, P89

[9]

COMPAAN A, 1981, LASER ELECTRON BEAM, V1, P15

[10]

COMPAAN A, 1982, LASER ELECTRON BEAM, V4