DETERMINATION OF GENERATION LIFETIME FROM SMALL-SIGNAL TRANSIENT-BEHAVIOR OF MOS CAPACITORS

被引：12

作者：

ZECHNALL, W ^{[1
]}

WERNER, WM ^{[1
]}

机构：

[1] TH AACHEN,INST THEORET ELEKTROTECH,KOPERNIKUS STR 16,51 AACHEN,FED REP GER

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 11期

关键词：

D O I：

10.1016/0038-1101(75)90114-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：971 / 976

页数：6

共 11 条

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[8] ON SEPARATION OF BULK AND SURFACE COMPONENTS OF LIFETIME USING PULSED MOS CAPACITOR [J].

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[9] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

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[10]

ZECHNALL W, 1974, SPR ECS M SAN FRANC

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