KINETICS OF FILM GROWTH OF EPITAXIAL GE ON GE AND GAAS BY VAPOR-PHASE TRANSPORT

被引：3

作者：

ETIENNE, D

BOUGNOT, G

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(84)90361-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：499 / 508

页数：10

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