VACANCY-VACANCY EFFECTIVE INTERACTION IN THE BULK AND ON THE SURFACE OF A SIMPLE SOLID

被引:4
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YANIV, A
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10.1103/PhysRevB.24.7093
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T [工业技术];
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08 ;
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页码:7093 / 7098
页数:6
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[1]  
ALLAN G, 1970, ANN PHYS-PARIS, V5, P169
[2]   NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1979, 19 (10) :4965-4979
[3]   SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1979, 43 (13) :956-959
[4]   SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS [J].
BERNHOLC, J ;
PANTELIDES, ST .
PHYSICAL REVIEW B, 1978, 18 (04) :1780-1789
[5]   VACANCIES NEAR SEMICONDUCTOR SURFACES [J].
DAW, MS ;
SMITH, DL .
PHYSICAL REVIEW B, 1979, 20 (12) :5150-5156
[6]  
FRIEDEL J, 1964, T METALL SOC AIME, V230, P616
[7]   LOCALIZED DEFECTS IN III-V SEMICONDUCTORS [J].
JAROS, M ;
BRAND, S .
PHYSICAL REVIEW B, 1976, 14 (10) :4494-4505
[8]   GREENS FUNCTION THEORY OF SURFACE STATES [J].
KALKSTEIN, D ;
SOVEN, P .
SURFACE SCIENCE, 1971, 26 (01) :85-+
[9]   WAVE FUNCTIONS FOR IMPURITY LEVELS [J].
KOSTER, GF ;
SLATER, JC .
PHYSICAL REVIEW, 1954, 95 (05) :1167-1176
[10]   SIMPLIFIED IMPURITY CALCULATION [J].
KOSTER, GF ;
SLATER, JC .
PHYSICAL REVIEW, 1954, 96 (05) :1208-1223