GAI SELF-INTERSTITIAL-RELATED DEFECT IN GAP STUDIED BY OPTICALLY DETECTED MAGNETIC-RESONANCE

被引:11
作者
CHEN, WM
MONEMAR, B
机构
来源
PHYSICAL REVIEW B | 1989年 / 40卷 / 02期
关键词
D O I
10.1103/PhysRevB.40.1365
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1365 / 1368
页数:4
相关论文
共 16 条
[1]   ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1985, 55 (12) :1327-1330
[2]  
Chen W. M., 1989, Materials Science Forum, V38-41, P899, DOI 10.4028/www.scientific.net/MSF.38-41.899
[3]   2 DEEP (PGA-CU)-RELATED NEUTRAL COMPLEX DEFECTS IN GAP STUDIED WITH OPTICALLY DETECTED MAGNETIC-RESONANCE [J].
CHEN, WM ;
MONEMAR, B ;
GODLEWSKI, M .
PHYSICAL REVIEW B, 1988, 37 (05) :2564-2569
[4]   PGA-ANTISITE-RELATED NEUTRAL COMPLEX DEFECT IN GAP STUDIED WITH OPTICALLY DETECTED MAGNETIC-RESONANCE [J].
CHEN, WM ;
GISLASON, HP ;
MONEMAR, B .
PHYSICAL REVIEW B, 1987, 36 (09) :5058-5061
[5]  
CHEN WM, 1988, MATERIALS RES SOC S, V104, P443
[6]   NEW EVIDENCE FOR THE 2-ELECTRON O- STATE IN GAP [J].
GAL, M ;
CAVENETT, BC ;
SMITH, P .
PHYSICAL REVIEW LETTERS, 1979, 43 (21) :1611-1614
[7]   OPTICALLY DETECTED MAGNETIC-RESONANCE IN OXYGEN-DOPED GAP [J].
GODLEWSKI, M ;
MONEMAR, B .
PHYSICAL REVIEW B, 1988, 37 (05) :2752-2755
[8]   IDENTIFICATION OF THE GA INTERSTITIAL IN ALXGA1-XAS BY OPTICALLY DETECTED MAGNETIC-RESONANCE [J].
KENNEDY, TA ;
SPENCER, MG .
PHYSICAL REVIEW LETTERS, 1986, 57 (21) :2690-2693
[9]   OPTICAL-DETECTION OF MAGNETIC-RESONANCE FOR A DEEP-LEVEL DEFECT IN SILICON [J].
LEE, KM ;
ODONNELL, KP ;
WEBER, J ;
CAVENETT, BC ;
WATKINS, GD .
PHYSICAL REVIEW LETTERS, 1982, 48 (01) :37-40
[10]  
LEE KM, 1988, MATERIALS RES SOC S, V104, P449