SCHOTTKY-DIODE REALIZATION FOR LOW-NOISE MIXING AT MILLIMETER WAVELENGTHS

被引：8

作者：

WRIXON, GT ^{[1
]}

机构：

[1] NATL UNIV IRELAND,UNIV COLL CORK,DEPT ELECT ENGN,CORK,IRELAND

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1976年 / 24卷 / 11期

关键词：

D O I：

10.1109/TMTT.1976.1128947

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：702 / 706

页数：5

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[6]

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[7] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J].

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[8] REVIEW OF THEORY AND TECHNOLOGY FOR OHMIC CONTACTS TO GROUP III-V COMPOUND SEMICONDUCTORS [J].

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[10] UNIFIED THEORY OF HIGH-FREQUENCY NOISE IN SCHOTTKY BARRIERS [J].

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