INTERFACE AND PRECIPITATION EFFECTS IN SOLID-PHASE EPITAXY OF SB IMPLANTED AMORPHOUS SI

被引：7

作者：

CAMPISANO, SU ^{[1
]}

GIBSON, JM ^{[1
]}

POATE, JM ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 06期

关键词：

D O I：

10.1063/1.95546

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：580 / 581

页数：2

相关论文

共 4 条

[1] TEMPERATURE AND CONCENTRATION-DEPENDENCE OF EPITAXIAL-GROWTH RATE IN SB AND GA IMPLANTED SI
CAMPISANO, SU
CHU, TC
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (03): : 157 - 160
[2] LAU SS, 1980, HDB SEMICONDUCTORS, V3, pCH3
[3] INTERFACE STRUCTURES DURING SOLID-PHASE-EPITAXIAL GROWTH IN ION-IMPLANTED SEMICONDUCTORS AND A CRYSTALLIZATION MODEL
NARAYAN, J
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) : 8607 - 8614
[4] WILLIAMS JS, 1983, SURFACE MODIFICATION, pCH5