1ST DFB GRIN-SCH GAINAS/AIGAINAS 1.55-MU-M MBE MQW ACTIVE LAYER BURIED RIDGE STRUCTURE LASERS

被引：8

作者：

BLEZ, M

KAZMIERSKI, C

QUILLEC, M

ROBEIN, D

ALLOVON, M

GLOUKHIAN, A

SERMAGE, B

机构：

[1] Centre National d'Etudes des Telecommunications, Laboratoire de Bagneux, 196, avenue Henri Ravera

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 01期

关键词：

LASERS; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19910059

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A report is made on the realisation for the first time of DFB GaInAs/AlGaInAs MQW active layer lasers with good static, dynamic and spectral performances; threshold currents as low as 13 mA are reported, and a maximum resonant frequency of 9.4 GHz is observed at only 6.6 mW power output. These values compare fairly well to those obtained with similar processes in the InGaAsP system and can probably be improved by a further optimisation of the structure.

引用

页码：93 / 95

页数：3

共 10 条

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