PHOTO-LUMINESCENCE OF UNDOPED IN0.53GA0.47AS INP GROWN BY THE VAPOR-PHASE EPITAXY TECHNIQUE

被引：27

作者：

TOWE, E ^{[1
]}

机构：

[1] RCA CORP LABS, PRINCETON, NJ 08540 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 07期

关键词：

D O I：

10.1063/1.331349

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：5136 / 5139

页数：4

相关论文

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