RESONANT INTERACTION OF ACCEPTOR STATES AND OPTICAL PHONONS IN SILICON

被引：5

作者：

CHANDRASEKHAR, HR

RAMDAS, AK

RODRIGUEZ, S

机构：

[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907

[2] MAX PLANCK INST FESTKORPER FORSCH,STUTTGART,FED REP GER

来源：

SOLID STATE COMMUNICATIONS | 1976年 / 18卷 / 03期

关键词：

D O I：

10.1016/0038-1098(76)90035-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：405 / 408

页数：4

共 13 条

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[2]

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[3]

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[9] SPECTROSCOPIC INVESTIGATION OF GROUP-3 ACCEPTOR STATES IN SILICON [J].

ONTON, A ;

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[10] EFFECTS OF RESONANT PHONON INTERACTIONS ON SHAPES OF IMPURITY ABSORPTION LINES [J].

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SCHULTZ, TD .

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