QUANTITATIVE PIEZOSPECTROSCOPY OF GROUND AND EXCITED-STATES OF ACCEPTORS IN SILICON

被引：58

作者：

CHANDRAS.HR ^{[1
]}

FISHER, P ^{[1
]}

RAMDAS, AK ^{[1
]}

RODRIGUE.S ^{[1
]}

机构：

[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907

来源：

PHYSICAL REVIEW B | 1973年 / 8卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.8.3836

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3836 / 3851

页数：16

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