THEORY OF SPACE-CHARGE-LIMITED CURRENTS IN MATERIALS WITH AN EXPONENTIAL ENERGY-DISTRIBUTION OF CAPTURE CENTERS

被引：2

作者：

GILDENBLAT, GS

NAKAGAWA, S

BOLKHOVSKY, V

机构：

[1] PENN STATE UNIV, DEPT ELECT ENGN, UNIVERSITY PK, PA 16802 USA

[2] DIGITAL EQUIPMENT CORP, HUDSON, MA 01749 USA

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 09期

关键词：

D O I：

10.1016/0038-1101(89)90004-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：717 / 726

页数：10

共 25 条

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[2] SPACE-CHARGE LIMITED CONDUCTION IN N+NN+ AMORPHOUS HYDROGENATED SILICON FILMS
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[3] GAP-STATE DISTRIBUTION IN EVAPORATED ALPHA-SI WITHOUT AND WITH POST-HYDROGENATION USING SPACE-CHARGE-LIMITED-CURRENT METHOD
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[4] GAP STATES STUDY OF EVAPORATED SILICON FILMS BEFORE AND AFTER HYDROGENATION
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 285 - 288
[5] THRESHOLD SWITCHING IN HYDROGENATED AMORPHOUS-SILICON
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[J]. APPLIED PHYSICS LETTERS, 1982, 40 (09) : 812 - 813
[6] FUKASAWA S, 1982, SOLID STATE COMMUN, V44, P927
[7] DENSITY OF STATES STUDY OF SPUTTERED AND EVAPORATED A-SI-H BY SPACE-CHARGE-LIMITED CURRENT TECHNIQUE
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[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 51 (03): : L33 - L38
[8] SPACE-CHARGE-LIMITED CURRENTS IN MATERIALS WITH NONLINEAR VELOCITY-FIELD RELATIONSHIPS
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RAO, AR
COHEN, SS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (10) : 2165 - 2172
[9] EXTENSION OF THEORETICAL DESCRIPTION OF SPACE-CHARGE-LIMITED CURRENTS IN INSULATORS
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KALINOWSKI, J
[J]. SOLID STATE COMMUNICATIONS, 1978, 25 (07) : 473 - 475
[10] SPACE-CHARGE-LIMITED CURRENT AND CAPACITANCE IN DOUBLE-JUNCTION DIODES
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) : 1181 - 1189

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