GAP STATES STUDY OF EVAPORATED SILICON FILMS BEFORE AND AFTER HYDROGENATION

被引：6

作者：

CHIK, KP ^{[1
]}

YU, CK ^{[1
]}

LIM, PK ^{[1
]}

TONG, BY ^{[1
]}

WONG, SK ^{[1
]}

JOHN, PK ^{[1
]}

机构：

[1] UNIV WESTERN ONTARIO,LONDON N6A 3K7,ONTARIO,CANADA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90577-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：285 / 288

页数：4

共 12 条

[1] EVIDENCE OF SPACE-CHARGE-LIMITED CURRENT IN AMORPHOUS-SILICON SCHOTTKY DIODES
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LESTER, A
FONASH, SJ
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 200 - 202
[2] DIRECT MEASUREMENT OF THE BULK-DENSITY OF GAP STATES IN N-TYPE HYDROGENATED AMORPHOUS-SILICON
COHEN, JD
LANG, DV
HARBISON, JP
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (03) : 197 - 200
[3] ELECTRONIC DENSITY OF STATES IN DISCHARGE-PRODUCED AMORPHOUS SILICON
HIROSE, M
SUZUKI, T
DOHLER, GH
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (03) : 234 - 236
[4] JOHN PK, 1981, 9TH P INT C AM LIQ S, P639
[5] Lampert M.A., 1970, PHYS B, DOI DOI 10.1088/0031-9112/21/12/031/PDF
[6] THE DENSITY OF STATES IN AMORPHOUS-SILICON DETERMINED BY SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS
MACKENZIE, KD
LECOMBER, PG
SPEAR, WE
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (04): : 377 - 389
[7] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE
MADAN, A
LECOMBER, PG
SPEAR, WE
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) : 239 - 257
[8] EVIDENCE FOR A PSEUDOGAP IN LIQUID MERCURY
MOTT, NF
[J]. PHILOSOPHICAL MAGAZINE, 1972, 26 (03) : 505 - +
[9] NESPUREK GW, 1980, J APPL PHYS, V51, P2098
[10] A NEW APPROACH TO THE INTERPRETATION OF TRANSPORT RESULTS IN A-SI
SPEAR, WE
ALLAN, D
LECOMBER, P
GHAITH, A
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (04): : 419 - 438

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