A NEW APPROACH TO THE INTERPRETATION OF TRANSPORT RESULTS IN A-SI

被引：109

作者：

SPEAR, WE

ALLAN, D

LECOMBER, P

GHAITH, A

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1980年 / 41卷 / 04期

关键词：

D O I：

10.1080/13642818008245397

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：419 / 438

页数：20

共 19 条

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[7] HYDROGEN CONTENT, ELECTRICAL-PROPERTIES AND STABILITY OF GLOW-DISCHARGE AMORPHOUS SILICON [J].

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[8] THERMOELECTRIC-POWER IN PHOSPHORUS DOPED AMORPHOUS SILICON [J].

JONES, DI ;

COMBER, PGL ;

SPEAR, WE .

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[9]

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[10] ELECTRONIC TRANSPORT IN AMORPHOUS SILICON FILMS [J].

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