LOW-ENERGY ION-IMPLANTATION IN POLYBITHIOPHENE - MICROSTRUCTURING AND MICROANALYSIS

Low energy ion implantation in polybithiophene (thickness 200 nm) forms a 20 nm thin modified surface layer. Combining surface analysis and electrochemical methods a non destructive depth resolved investigation of the proper-ties of the implanted layer was performed. The composition of the modified layer is dependent on the implanted species: N causes doping, O has a sputtering effect. The modified layer acts as an electronic and ionic barrier as shown by cyclic voltammetry and electron transfer reactions. The effectivity of barrier formation is dependent on the sample pretreatment and the redox state, For reduced samples the redox charge increases for repeated voltammograms (regeneration effect). The according dose dependent band scheme shows an increasing surface resistivity for law doses. At high doses the surface resistivity decreases again due to graphitization. By application of a microstructured mask the polybithiophene was structured within a mu m range, Laterally high resolving methods revealed sharp interfaces between implanted and pristine surface ranges. The doping pattern and the electronic properties are localized and do not alter even in an electrolyte, So conducting polymers can be microstructured to give stable structures with changed composition and modified electronic and ionic properties as required for microtechnological applications.