DISSOCIATIVE H2O ADSORPTION ON THE SI(100)2X1 AND GE(100)2X1 SURFACES

被引：16

作者：

LARSSON, CUS

FLODSTROM, AS

机构：

[1] Materials Science, Royal Institute of Technology

来源：

VACUUM | 1991年 / 42卷 / 04期

关键词：

CORE-LEVEL SHIFTS; PHOTOELECTRON-SPECTROSCOPY; CHEMISORPTION; WATER; GE(001)-(2X1); GE(100)-(2X1); GERMANIUM; SI(111); STATES;

D O I：

10.1016/0042-207X(91)90041-G

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Core-level spectroscopy and valence band photoelectron spectroscopy were used to study H2O adsorption on the Si(100) and Ge(100) surfaces. We find that H2O dissociates into H and OH on both surfaces at 300 K. The H and OH are adsorbed in on top positions on the surface. The OH group is tilted with respect to the surface normal on the Si(100) surface. We consider two possible interpretations for the results from the H2O dosed Ge(100) surface at 300 K. Either a similar model as for the Si(100) surface or a model based on two adsorption sites.

引用

页码：297 / 300

页数：4

共 25 条

[1] HYDROGEN CHEMISORPTION ON 100 (2X1) SURFACES OF SI AND GE [J].