GAS PHASE ETCHING OF SAPPHIRE WITH SULFUR FLUORIDES

被引：11

作者：

MANASEVIT, HM

MORRITZ, FL

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1967年 / 114卷 / 2P1期

关键词：

D O I：

10.1149/1.2426539

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：204 / +

页数：1

共 11 条

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MCCLOSKEY, AL ;

MANASEVIT, HM .

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[2] STUDIES ON TRANSPORT AND DEPOSITION OF ALPHA-ALUMINUM OXIDE [J].

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[3] SINGLE-CRYSTAL SILICON ON SAPPHIRE SUBSTRATE [J].

MANASEVIT, HM ;

SIMPSON, WI .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) :1349-&

[4]

MANASEVIT HM, 1966, T METALL SOC AIME, V236, P275

[5]

MANASEVIT HM, 1965, T METALL SOC AIME, V233, P540

[6]

MUETTERTIES EL, 1959, Patent No. 2883267

[7] SUBLIMATION OF ALUMINUM OXIDE IN HYDROGEN [J].

READEY, DW ;

KUCZYNSKI, GC .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1966, 49 (01) :26-+

[8]

ROBINSON PH, 1966, T METALL SOC AIME, V236, P268

[9] DIRECT OBSERVATION OF DISLOCATIONS IN SAPPHIRE [J].

VORUZ, TA ;

JEWETT, RP ;

ACCOUNTIUS, OE .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1963, 46 (09) :459-460

[10]

1964, AF196284220 WEST RES

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