PREPARATION AND PROPERTIES OF ZNSIAS2 ZNGEP2 AND CDGEP2 SEMICONDUCTING COMPOUNDS

被引：74

作者：

MASUMOTO, K

ISOMURA, S

GOTO, W

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1966年 / 27卷 / 11-1期

关键词：

D O I：

10.1016/0022-3697(66)90124-7

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

收藏

页码：1939 / &

相关论文

共 17 条

[1] PROPERTIES OF HIGH-RESISTIVITY GALLIUM ARSENIDE COMPENSATED WITH DIFFUSED COPPER
BLANC, J
MACDONALD, HE
BUBE, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) : 1666 - &
[2] BOKII GV, 1960, CRYSTAL CHEMISTRY
[3] DIE KRISTALLSTRUKTUR VON ZNSNAS2
FOLBERTH, OG
PFISTER, H
[J]. ACTA CRYSTALLOGRAPHICA, 1960, 13 (03): : 199 - 201
[4] FOLBERTH OG, 1958, SEMICONDUCTORS PHOSP, P474
[5] PROPERTIES OF ZNSNAS2 AND CDSNAS2
GASSON, DB
PARROTT, JE
JENNINGS, IC
HOLMES, PJ
MARATHE, BR
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (SEP) : 1291 - &
[6] THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT
GLASSBRENNER, CJ
SLACK, GA
[J]. PHYSICAL REVIEW, 1964, 134 (4A): : 1058 - +
[7] NEW GROUP OF COMPOUNDS WITH DIAMOND-TYPE (CHALCOPYRITE) STRUCTURE
GOODMAN, CHL
[J]. NATURE, 1957, 179 (4564) : 828 - 829
[8] ELECTRONEGATIVITIES OF THE ELEMENTS
GORDY, W
THOMAS, WJO
[J]. JOURNAL OF CHEMICAL PHYSICS, 1956, 24 (02) : 439 - 444
[9] PREPARATION + SEMICONDUCTING PROPERTIES OF CD3P2
HAACKE, G
CASTELLION, GA
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (08) : 2484 - &
[10] HILSUM C, 1965, PROG SEMICOND, V9, P137