THE TEMPERATURE-DEPENDENCE OF THRESHOLD VOLTAGES IN SUBMICROMETER CMOS

[1] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 218 - 229

[2] HUANG JST, 1984, IEEE T ELECTRON DEV, V31, P1889

[3] SIMPLE ANALYTICAL MODELS FOR THE TEMPERATURE-DEPENDENT THRESHOLD BEHAVIOR OF DEPLETION-MODE DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 501 - 508

[4] THRESHOLD AND SUB-THRESHOLD CHARACTERISTICS THEORY FOR A VERY SMALL BURIED-CHANNEL MOSFET USING A MAJORITY-CARRIER DISTRIBUTION MODEL [J]. SOLID-STATE ELECTRONICS, 1981, 24 (04) : 301 - 308

[5] PUTLEY EH, 1960, HALL EFFECT SEMICOND, P122

[6] FABRICATION OF HIGH-PERFORMANCE LDDFETS WITH OXIDE SIDEWALL-SPACER TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 590 - 596

[7] YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2

[1] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 218 - 229

[2] HUANG JST, 1984, IEEE T ELECTRON DEV, V31, P1889

[3] SIMPLE ANALYTICAL MODELS FOR THE TEMPERATURE-DEPENDENT THRESHOLD BEHAVIOR OF DEPLETION-MODE DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 501 - 508

[4] THRESHOLD AND SUB-THRESHOLD CHARACTERISTICS THEORY FOR A VERY SMALL BURIED-CHANNEL MOSFET USING A MAJORITY-CARRIER DISTRIBUTION MODEL [J]. SOLID-STATE ELECTRONICS, 1981, 24 (04) : 301 - 308

[5] PUTLEY EH, 1960, HALL EFFECT SEMICOND, P122

[6] FABRICATION OF HIGH-PERFORMANCE LDDFETS WITH OXIDE SIDEWALL-SPACER TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 590 - 596

[7] YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2