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THE TEMPERATURE-DEPENDENCE OF THRESHOLD VOLTAGES IN SUBMICROMETER CMOS
被引:18
作者
:
TZOU, JJ
论文数:
0
引用数:
0
h-index:
0
TZOU, JJ
YAO, CC
论文数:
0
引用数:
0
h-index:
0
YAO, CC
CHEUNG, R
论文数:
0
引用数:
0
h-index:
0
CHEUNG, R
CHAN, H
论文数:
0
引用数:
0
h-index:
0
CHAN, H
机构
:
来源
:
IEEE ELECTRON DEVICE LETTERS
|
1985年
/ 6卷
/ 05期
关键词
:
D O I
:
10.1109/EDL.1985.26114
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:250 / 252
页数:3
相关论文
共 7 条
[1]
VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION
GAENSSLEN, FH
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IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
GAENSSLEN, FH
RIDEOUT, VL
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h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
RIDEOUT, VL
WALKER, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
WALKER, EJ
WALKER, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
WALKER, JJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(03)
: 218
-
229
[2]
HUANG JST, 1984, IEEE T ELECTRON DEV, V31, P1889
[3]
SIMPLE ANALYTICAL MODELS FOR THE TEMPERATURE-DEPENDENT THRESHOLD BEHAVIOR OF DEPLETION-MODE DEVICES
JAEGER, RC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
JAEGER, RC
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
GAENSSLEN, FH
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 501
-
508
[4]
THRESHOLD AND SUB-THRESHOLD CHARACTERISTICS THEORY FOR A VERY SMALL BURIED-CHANNEL MOSFET USING A MAJORITY-CARRIER DISTRIBUTION MODEL
OMURA, Y
论文数:
0
引用数:
0
h-index:
0
OMURA, Y
OHWADA, K
论文数:
0
引用数:
0
h-index:
0
OHWADA, K
[J].
SOLID-STATE ELECTRONICS,
1981,
24
(04)
: 301
-
308
[5]
PUTLEY EH, 1960, HALL EFFECT SEMICOND, P122
[6]
FABRICATION OF HIGH-PERFORMANCE LDDFETS WITH OXIDE SIDEWALL-SPACER TECHNOLOGY
TSANG, PJ
论文数:
0
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IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
TSANG, PJ
OGURA, S
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机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
OGURA, S
WALKER, WW
论文数:
0
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IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
WALKER, WW
SHEPARD, JF
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0
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IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
SHEPARD, JF
CRITCHLOW, DL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
CRITCHLOW, DL
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(04)
: 590
-
596
[7]
YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2
←
1
→
共 7 条
[1]
VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
GAENSSLEN, FH
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
RIDEOUT, VL
WALKER, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
WALKER, EJ
WALKER, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
WALKER, JJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(03)
: 218
-
229
[2]
HUANG JST, 1984, IEEE T ELECTRON DEV, V31, P1889
[3]
SIMPLE ANALYTICAL MODELS FOR THE TEMPERATURE-DEPENDENT THRESHOLD BEHAVIOR OF DEPLETION-MODE DEVICES
JAEGER, RC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
JAEGER, RC
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
GAENSSLEN, FH
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(04)
: 501
-
508
[4]
THRESHOLD AND SUB-THRESHOLD CHARACTERISTICS THEORY FOR A VERY SMALL BURIED-CHANNEL MOSFET USING A MAJORITY-CARRIER DISTRIBUTION MODEL
OMURA, Y
论文数:
0
引用数:
0
h-index:
0
OMURA, Y
OHWADA, K
论文数:
0
引用数:
0
h-index:
0
OHWADA, K
[J].
SOLID-STATE ELECTRONICS,
1981,
24
(04)
: 301
-
308
[5]
PUTLEY EH, 1960, HALL EFFECT SEMICOND, P122
[6]
FABRICATION OF HIGH-PERFORMANCE LDDFETS WITH OXIDE SIDEWALL-SPACER TECHNOLOGY
TSANG, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
TSANG, PJ
OGURA, S
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
OGURA, S
WALKER, WW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
WALKER, WW
SHEPARD, JF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
SHEPARD, JF
CRITCHLOW, DL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
IBM CORP, DIV GEN TECHNOL, ESSEX JUNCTION, VT 05452 USA
CRITCHLOW, DL
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(04)
: 590
-
596
[7]
YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2
←
1
→