EVAPORATION AND RIPPLE FORMATION DURING PULSED LASER IRRADIATION OF GAAS

被引：3

作者：

BOERMA, DO

HASPER, H

PRASAD, KG

机构：

来源：

PHYSICS LETTERS A | 1983年 / 93卷 / 05期

关键词：

D O I：

10.1016/0375-9601(83)90810-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：253 / 256

页数：4

共 19 条

[1] TIME-RESOLVED TRANSMISSION OF GAAS UNDER INTENSE LASER EXCITATION [J].

AYDINLI, A ;

COMPAAN, A ;

LO, HW ;

LEE, MC .

PHYSICS LETTERS A, 1981, 86 (03) :199-202

[2] AN EXPERIMENTAL TEST OF GAAS DECOMPOSITION DUE TO PULSED LASER IRRADIATION [J].

DEJONG, T ;

WANG, ZL ;

SARIS, FW .

PHYSICS LETTERS A, 1982, 90 (03) :147-149

[3] LASER GENERATION OF HIGH-AMPLITUDE STRESS WAVES IN MATERIALS [J].

FAIRAND, BP ;

CLAUER, AH .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1497-1502

[4] SURFACE RIPPLES ON SILICON AND GALLIUM-ARSENIDE UNDER PICOSECOND LASER ILLUMINATION [J].

FAUCHET, PM ;

SIEGMAN, AE .

APPLIED PHYSICS LETTERS, 1982, 40 (09) :824-826

[5]

FLETCHER J, 1981, P MRS S DEFECTS SEMI, P431

[6]

GAMO K, 1979, LASER SOLID INTERACT, P591

[7]

GIBBONS JF, 1981, P MRS S LASER ELECTR

[8] SYNCHROTRON X-RAY-DIFFRACTION STUDY OF SILICON DURING PULSED-LASER ANNEALING [J].

LARSON, BC ;

WHITE, CW ;

NOGGLE, TS ;

MILLS, D .

PHYSICAL REVIEW LETTERS, 1982, 48 (05) :337-340

[9] ORIGIN OF PERIODIC SURFACE-STRUCTURE OF LASER-ANNEALED SEMICONDUCTORS [J].

MARACAS, GN ;

HARRIS, GL ;

LEE, CA ;

MCFARLANE, RA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :453-455

[10]

NAYARAN J, 1981, P MRS S DEFECTS SEMI

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