ORIGIN OF PERIODIC SURFACE-STRUCTURE OF LASER-ANNEALED SEMICONDUCTORS

被引：93

作者：

MARACAS, GN ^{[1
]}

HARRIS, GL ^{[1
]}

LEE, CA ^{[1
]}

MCFARLANE, RA ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 05期

关键词：

D O I：

10.1063/1.90376

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：453 / 455

页数：3

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[J]. APPLIED PHYSICS LETTERS, 1978, 32 (09) : 535 - 537
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[9] LASER ANNEALING OF BORON-IMPLANTED SILICON
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