IMPURITY-STIMULATED CRYSTALLIZATION AND DIFFUSION IN AMORPHOUS-SILICON

[1] THERMOMIGRATION OF GOLD-RICH DROPLETS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) : 2473 - &

[2] SUPERSATURATED SOLID-SOLUTIONS AFTER SOLID-PHASE EPITAXIAL-GROWTH IN BI-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 170 - 172

[3] DONOVAN EP, 1984, THESIS HARVARD U

[4] DIFFUSION AND PRECIPITATION IN AMORPHOUS SI [J]. APPLIED PHYSICS LETTERS, 1985, 46 (05) : 478 - 480

[5] ELLIMAN RG, 1983, NUCL INSTRUM METHODS, V210, P663

[6] ELLIMAN RG, 1986, MATER RES SOC S P, V51, P389

[7] NYGREN E, 1987, MATER RES SOC S P, V74, P307

[8] OLSON GL, 1985, MATER RES SOC S P, V35, P25

[9] Formation of stable dopant interstitials during ion implantation of silicon [J]. JOURNAL OF MATERIALS RESEARCH, 1986, 1 (03) : 476 - 492

[10] Poate J. M., 1984, Ion implantation and beam processing, P13

[1] THERMOMIGRATION OF GOLD-RICH DROPLETS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) : 2473 - &

[2] SUPERSATURATED SOLID-SOLUTIONS AFTER SOLID-PHASE EPITAXIAL-GROWTH IN BI-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 170 - 172

[3] DONOVAN EP, 1984, THESIS HARVARD U

[4] DIFFUSION AND PRECIPITATION IN AMORPHOUS SI [J]. APPLIED PHYSICS LETTERS, 1985, 46 (05) : 478 - 480

[5] ELLIMAN RG, 1983, NUCL INSTRUM METHODS, V210, P663

[6] ELLIMAN RG, 1986, MATER RES SOC S P, V51, P389

[7] NYGREN E, 1987, MATER RES SOC S P, V74, P307

[8] OLSON GL, 1985, MATER RES SOC S P, V35, P25

[9] Formation of stable dopant interstitials during ion implantation of silicon [J]. JOURNAL OF MATERIALS RESEARCH, 1986, 1 (03) : 476 - 492

[10] Poate J. M., 1984, Ion implantation and beam processing, P13