CHARGE BUILDUP IN MAGNETIZED PROCESS PLASMA

被引：13

作者：

NAMURA, T ^{[1
]}

OKADA, H ^{[1
]}

NAITOH, Y ^{[1
]}

TODOKORO, Y ^{[1
]}

INOUE, M ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD,SEMICOND RES CTR,MORIGUCHI,OSAKA 570,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 07期

关键词：

CHARGE BUILDUP; MOS CAPACITOR BREAKDOWN; MAGNETRON RF ETCHER; MNOS CAPACITOR; EQUIVALENT CIRCUIT;

D O I：

10.1143/JJAP.30.1576

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The charge buildup in a magnetron etcher has been studied experimentally for two different magnet arrangements and theoretically on the basis of an equivalent circuit model. Wafer charging measured with a metal-Si3N4-SiO2-Si (MNOS) capacitor is negative along the centerline of the magnet poles and positive between the magnets in both cases. Wafer charging is explained either by curtent crowding at the center of the magnet poles or by the nonambipolar diffusion effect.

引用

页码：1576 / 1580

页数：5

共 7 条

[1]

Bohm D., 1949, MINIMUM IONIC KINETI

[2]

BROWN SC, 1956, HDB PHYSIK, V22, P531

[3]

CHEN F, 1974, INTRO PLASMA PHYSICS

[4]

KAWAMOTO Y, 1985, 7TH P S DRY PROC TOK, P1322

[5] EXPERIMENTAL AND THEORETICAL-STUDY OF THE CHARGE BUILDUP IN AN ECR ETCHER [J].

NAMURA, T ;

OKADA, H ;

NAITOH, Y ;

TODOKORO, Y ;

INOUE, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (10) :2251-2254

[6]

NAMURA T, 1989, 11TH P S DRY PROC, P74

[7]

Tsunokuni K., 1987, 19TH C SOL STAT DEV, P195

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