ODMR INVESTIGATION OF RECOMBINATION PROCESSES IN A-SIXC1-X-H

被引:8
作者
DEPINNA, SP
CAVENETT, BC
SUSSMANN, R
机构
[1] UNIV HULL,DEPT PHYS,HULL HU6 7RX,N HUMBERSIDE,ENGLAND
[2] PLESSEY LTD,ALLEN CLARKE RES CTR,CASWELL,ENGLAND
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1983年 / 47卷 / 05期
关键词
D O I
10.1080/13642812.1983.11643265
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:L51 / L55
页数:5
相关论文
共 17 条
[1]   ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE [J].
ANDERSON, DA ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE, 1977, 35 (01) :1-16
[2]   IRON IMPURITIES AS NON-RADIATIVE RECOMBINATION CENTERS IN CHALCOGENIDE GLASSES [J].
BISHOP, SG ;
TAYLOR, PC .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 40 (06) :483-495
[4]  
CAVENETT BC, 1983, P NATO C COHERENCE E
[5]  
CAVENETT BC, 1982, SOLID ST COMMUN, V43
[6]  
CAVENETT BC, 1983, PHIL MAG B
[7]   CHARACTERIZATION OF RADIATIVE RECOMBINATION IN AMORPHOUS-SILICON BY OPTICALLY DETECTED MAGNETIC-RESONANCE .2. [J].
DEPINNA, S ;
CAVENETT, BC ;
SEARLE, TM ;
AUSTIN, IG .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (05) :501-513
[8]   CHARACTERIZATION OF RADIATIVE RECOMBINATION IN AMORPHOUS-SILICON BY OPTICALLY DETECTED MAGNETIC-RESONANCE .1. [J].
DEPINNA, S ;
CAVENETT, BC ;
AUSTIN, IG ;
SEARLE, TM ;
THOMPSON, MJ ;
ALLISON, J ;
LECOMBER, PG .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (05) :473-500
[9]   A DIRECT DETERMINATION OF THE LIFETIME DISTRIBUTION OF THE 1.4 EV LUMINESCENCE OF A-SI-H [J].
DUNSTAN, DJ ;
DEPINNA, SP ;
CAVENETT, BC .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (13) :L425-L429
[10]   PHOTO-LUMINESCENCE IN AMORPHOUS SYSTEM SIXC1-X [J].
ENGEMANN, D ;
FISCHER, R ;
KNECHT, J .
APPLIED PHYSICS LETTERS, 1978, 32 (09) :567-568