EXPERIMENTAL-STUDY ON CLOSE-IN TO MICROWAVE CARRIER PHASE NOISE OF LASER-DIODE WITH EXTERNAL FEEDBACK

被引：6

作者：

NI, TD ^{[1
]}

ZHANG, XD ^{[1
]}

DARYOUSH, AS ^{[1
]}

机构：

[1] DREXEL UNIV,DEPT ELECT & COMP ENGN,PHILADELPHIA,PA 19104

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1995年 / 43卷 / 09期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/22.414576

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The residual phase noise at close-in to carrier offset frequency is studied for optical links using a laser diode with an external optical feedback. Since the measured FM noise degradation of the modulating signal was found to be insignificantly higher than the expected 20 log (n) in dB, the residual phase noise of the laser diode was measured to quantify the expected carrier signal FM noise floor level. The measured residual phase noise of a InGaAsP laser diode at 1 KHz offset carrier signal of 5.08 GHz is measured to be -100 and -90 dBc/Hz for with and without a 3-cm-long free-space external cavity, respectively. The close-in to carrier phase noise results of this laser at the external cavity resonance frequency of approximate to 5 GHz is explained for the first time in terms of laser diode nonlinearity and FM noise theory of injection locked microwave oscillators. A good match between the predicted and measured results was observed.

引用

页码：2277 / 2283

页数：7

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