TEM CATHODOLUMINESCENCE STUDY OF RECOMBINATION BEHAVIOR AT DISLOCATIONS IN INDIUM-PHOSPHIDE

被引:2
作者
HUTCHINSON, HJ
MYHAJLENKO, S
机构
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1984年 / 50卷 / 04期
关键词
D O I
10.1080/13642818408238867
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
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页码:L49 / L53
页数:5
相关论文
共 10 条
[1]   PHOTO-LUMINESCENCE AT DISLOCATIONS IN GAAS AND INP [J].
BOHM, K ;
FISCHER, B .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5453-5460
[2]  
BROWN GT, 1981, I PHYSICS C SERIES, V60, P351
[3]   AN INVESTIGATION OF THE DEEP LEVEL PHOTO-LUMINESCENCE SPECTRA OF INP(MN), INP(FE), AND OF UNDOPED INP [J].
EAVES, L ;
SMITH, AW ;
SKOLNICK, MS ;
COCKAYNE, B .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4955-4963
[4]  
MYHAJLENKO S, 1984, I PHYSICS C SER, V68, P111
[5]  
MYHAJLENKO S, 1984, UNPUB J PHYS C
[6]   INVESTIGATION OF THE ELECTRONIC EFFECTS OF DISLOCATIONS BY STEM [J].
PENNYCOOK, SJ .
ULTRAMICROSCOPY, 1981, 7 (01) :99-104
[7]   LUMINESCENCE PROPERTIES OF GAAS-GA1-XALX AS DOUBLE HETEROSTRUCTURES AND MULTIQUANTUM-WELL SUPER-LATTICES GROWN BY MOLECULAR-BEAM EPITAXY [J].
PETROFF, PM ;
WEISBUCH, C ;
DINGLE, R ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1981, 38 (12) :965-967
[8]  
RASUL A, 1977, I PHYS C SER A, V33, P306
[9]   DEEP RADIATIVE LEVELS IN INP [J].
TEMKIN, H ;
DUTT, BV ;
BONNER, WA ;
KERAMIDAS, VG .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) :7526-7533
[10]   DEEP LEVEL DEFECTS IN PLASTICALLY DEFORMED SILICON [J].
WEBER, ER ;
ALEXANDER, H .
JOURNAL DE PHYSIQUE, 1983, 44 (NC-4) :319-328