ELECTRONIC-TRANSITIONS IN CDTE UNDER PRESSURE

被引:22
作者
PRAKASH, M [1 ]
CHANDRASEKHAR, M [1 ]
CHANDRASEKHAR, HR [1 ]
MIOTKOWSKI, I [1 ]
RAMDAS, AK [1 ]
机构
[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 06期
关键词
D O I
10.1103/PhysRevB.42.3586
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a photoluminescence study of CdTe:Sb at 5 and 15 K under hydrostatic pressures of 0 to 32 kbar. We determine the pressure coefficients of several electronic transitions: the neutral-acceptor-bound exciton A0X, its phonon replica A0X-LO, the electron-to-acceptor transition e-A0, its phonon replica (e-A0)-LO, and four donor-acceptor peaks. A nonlinear pressure behavior is found for the main exciton peak. The linear term is 7.60.2 meV/kbar. We find that the binding energies of the A0X and the bare acceptor change with pressure. This change influences acceptor-bound magnetic polaron binding energies in the Cd1-xMnxTe alloys. © 1990 The American Physical Society.
引用
收藏
页码:3586 / 3590
页数:5
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