FABRICATION AND CHARACTERIZATION OF FREELY POSITIONABLE SILICON-ON-SAPPHIRE PHOTOCONDUCTIVE PROBES

被引：19

作者：

PFEIFER, T

HEILIGER, HM

VONKAMIENSKI, ES

ROSKOS, HG

KURZ, H

机构：

[1] Institut fir Halbleitertechnik II, Rheinisch- Westfdlische Technische Hochschule Aachen, Aachen, 52056

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 1994年 / 11卷 / 12期

关键词：

D O I：

10.1364/JOSAB.11.002547

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A study of external photoconductive sampling is reported. We describe in detail the fabrication of photoconductive probes on silicon-on-sapphire Measurements of electric pulse propagation on terahertz-dipole antennas serve to characterize the linearity, the sensitivity, the time resolution, and the dielectric invasiveness of the probes.

引用

收藏

页码：2547 / 2552

页数：6

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