X-RAY MONITORING-SYSTEM FOR IN-SITU INVESTIGATION OF THIN-FILM GROWTH

被引：14

作者：

MIKHAJLOV, IF ^{[1
]}

PINEGIN, VI ^{[1
]}

SLEPTZOV, VV ^{[1
]}

BARANOV, AM ^{[1
]}

机构：

[1] SCI RES INST VACUUM TECHN,113105 MOSCOW,RUSSIA

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1995年 / 30卷 / 05期

关键词：

D O I：

10.1002/crat.2170300510

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The X-ray optical system of in situ monitoring of reflectivity measured in the short-wave range 0.5 - 3 Angstrom is proposed. Thickness, density, and microroughness of the growing film are determined for every half-wave of reflectivity oscillations that corresponds to the averaging by the layer of 10 Angstrom thickness. By the example of diamond-like film growing, the possibility of an analysis of transition processes and technology failure during film growth have been shown.

引用

页码：643 / 649

页数：7