ENERGY DEPENDENCE OF ANISOTROPY OF DEFECT PRODUCTION IN ELECTRON IRRADIATED DIAMOND-TYPE CRYSTALS .2. THEORETICAL MODEL

被引：13

作者：

BANBURY, PC

HADDAD, IN

机构：

来源：

PHILOSOPHICAL MAGAZINE | 1966年 / 14卷 / 130期

关键词：

D O I：

10.1080/14786436608211976

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：841 / &

共 8 条

[1] BAUERLEIN R, 1960, RADIATION DAMAGE SOL, P358
[2] ENERGY, ORIENTATION, AND TEMPERATURE DEPENDENCE OF DEFECT FORMATION IN ELECTRON IRRADIATION OF N-TYPE GERMANIUM
BROWN, WL
AUGUSTYNIAK, WM
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1300 - 1309
[3] CHEN Y, 1966, B AM PHYS SOC, V11, P18
[4] ERGINSOY G, 1964, PHYS REV A, V133, P595
[5] DYNAMICS OF RADIATION DAMAGE
GIBSON, JB
GOLAND, AN
MILGRAM, M
VINEYARD, GH
[J]. PHYSICAL REVIEW, 1960, 120 (04): : 1229 - 1253
[6] ENERGY DEPENDENCE OF ANISOTROPY OF DEFECT PRODUCTION IN ELECTRON IRRADIATED DIAMOND-TYPE CRYSTALS .I. EXPERIMENTAL MEASUREMENTS ON N AND P-TYPE SILICON
HADDAD, IN
BANBURY, PC
[J]. PHILOSOPHICAL MAGAZINE, 1966, 14 (130): : 829 - &
[7] RADIATION DAMAGE IN GE AND SI DETECTED BY CARRIER LIFETIME CHANGES - DAMAGE THRESHOLDS
LOFERSKI, JJ
RAPPAPORT, P
[J]. PHYSICAL REVIEW, 1958, 111 (02): : 432 - 439
[8] SEITZ F, 1956, SOLID STATE PHYSICS, V2, P441