SPECTROSCOPIC INVESTIGATION OF TANTALUM NITRIDE THIN-FILM DEPOSITION BY REACTIVE SPUTTERING IN A TRIODE SYSTEM

被引：1

作者：

DONTCHEV, S ^{[1
]}

GEORGIEV, P ^{[1
]}

GERASSIMOVA, K ^{[1
]}

KOURTEV, J ^{[1
]}

机构：

[1] INST ELECTR,SOFIA,BULGARIA

来源：

关键词：

D O I：

10.1016/0042-207X(85)90018-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：79 / 81

页数：3

共 5 条

[1] GLOW-DISCHARGE MASS-SPECTROMETRY OF SPUTTERED TANTALUM NITRIDE [J].

AITA, CR ;

MYERS, TA ;

LAROCCA, WJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :324-327

[2]

Berry R.W., 1968, THIN FILM TECHNOLOGY

[3] NITRIDE FILM DEPOSITION BY REACTIVE ION-BEAM SPUTTERING [J].

ERLER, HJ ;

REISSE, G ;

WEISSMANTEL, C .

[4] PHASE FORMING PROCESSES IN TANTALUM FILMS THROUGH SPUTTERING [J].

NAKAMURA, M ;

FUJIMORI, M ;

NISHIMURA, Y .

[5] MECHANISM OF RF REACTIVE SPUTTERING [J].

SHINOKI, F ;

ITOH, A .