ANOMALOUS FIELD-EFFECT IN GATED ANDERSON INSULATORS

被引：42

作者：

BENCHORIN, M

KOWAL, D

OVADYAHU, Z

机构：

[1] Racah Institute of Physics, Hebrew University

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.44.3420

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Investigation of the field effect in insulating indium oxide films reveals an anomalous feature: The conductance increases for both gate-voltage polarities. This feature, as well as the appearance of conductance oscillations, is discussed.

引用

页码：3420 / 3423

页数：4

共 16 条

[1] COULOMB GAP AND LOW-TEMPERATURE CONDUCTIVITY OF DISORDERED SYSTEMS [J].

EFROS, AL ;

SHKLOVSKII, BI .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (04) :L49-L51

[2] ELECTRON-MOBILITY, CONDUCTIVITY, AND SUPERCONDUCTIVITY NEAR THE METAL-INSULATOR-TRANSITION [J].

FIORY, AT ;

HEBARD, AF .

PHYSICAL REVIEW LETTERS, 1984, 52 (23) :2057-2060

[3]

LAIKO EI, 1987, ZH EKSP TEOR FIZ, V66, P1258

[4] ONE-DIMENSIONAL ELECTRON-GAS IN GAAS - PERIODIC CONDUCTANCE OSCILLATIONS AS A FUNCTION OF DENSITY [J].

MEIRAV, U ;

KASTNER, MA ;

HEIBLUM, M ;

WIND, SJ .

PHYSICAL REVIEW B, 1989, 40 (08) :5871-5874

[5] LONG-LIVED COULOMB GAP IN A COMPENSATED SEMICONDUCTOR - THE ELECTRON GLASS [J].

MONROE, D ;

GOSSARD, AC ;

ENGLISH, JH ;

GOLDING, B ;

HAEMMERLE, WH ;

KASTNER, MA .

PHYSICAL REVIEW LETTERS, 1987, 59 (10) :1148-1151

[6]

MORRISON SR, 1977, CHEM PHYSICS SURFACE

[7]

Orlov A. O., 1986, JETP Letters, V43, P540

[8] SOME FINITE TEMPERATURE ASPECTS OF THE ANDERSON TRANSITION [J].

OVADYAHU, Z .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (26) :5187-5213

[9] CONDUCTANCE OSCILLATIONS AND SOURCE-DRAIN-LIMITED CONDUCTION IN SI MOSFETS [J].

PEPPER, M ;

UREN, MJ ;

OAKLEY, RE .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (23) :L897-L900

[10] CONDUCTANCE OSCILLATIONS IN A 2-DIMENSIONAL IMPURITY BAND [J].

PEPPER, M .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (16) :L617-L625

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