CONDUCTANCE OSCILLATIONS AND SOURCE-DRAIN-LIMITED CONDUCTION IN SI MOSFETS

Presents results showing that near threshold, and in the helium range of temperatures, the conductance of the Si MOSFET can be determined by the source and drain. The occurrence of this effect is dependent on device fabrication conditions, and possibly on the doping profile in the source and drain regions. Carrier transport in these regions occurs in a surface accumulation layer, and can display the conductance oscillations first observed in GaAs structures. The oscillations are found for both p- and n-type Si, and may be accompanied by fine structure in the conductance.