FINE-STRUCTURE IN FIELD-EFFECT MOBILITY OF MOS-TRANSISTORS

[1] PEAKED STRUCTURE IN FIELD-EFFECT MOBILITY OF SILICON MOS-TRANSISTORS AT VERY LOW-TEMPERATURES [J]. APPLIED PHYSICS LETTERS, 1973, 23 (10) : 550 - 552

[2] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &

[3] PEAKED STRUCTURE APPEARING IN FIELD-EFFECT MOBILITY OF SILICON MOS DEVICES AT LIQUID-HELIUM TEMPERATURES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (19): : L353 - L355

[4] van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

[5] VANNIELEN JA, 1967, PHILIPS RES REP, V22, P55

[6] ADMITTANCE STUDIES OF SURFACE QUANTIZATION IN [100]-ORIENTED SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J]. PHYSICAL REVIEW B, 1974, 9 (10) : 4410 - 4421

[1] PEAKED STRUCTURE IN FIELD-EFFECT MOBILITY OF SILICON MOS-TRANSISTORS AT VERY LOW-TEMPERATURES [J]. APPLIED PHYSICS LETTERS, 1973, 23 (10) : 550 - 552

[2] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &

[3] PEAKED STRUCTURE APPEARING IN FIELD-EFFECT MOBILITY OF SILICON MOS DEVICES AT LIQUID-HELIUM TEMPERATURES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (19): : L353 - L355

[4] van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

[5] VANNIELEN JA, 1967, PHILIPS RES REP, V22, P55

[6] ADMITTANCE STUDIES OF SURFACE QUANTIZATION IN [100]-ORIENTED SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J]. PHYSICAL REVIEW B, 1974, 9 (10) : 4410 - 4421