PEAKED STRUCTURE APPEARING IN FIELD-EFFECT MOBILITY OF SILICON MOS DEVICES AT LIQUID-HELIUM TEMPERATURES

被引：16

作者：

TIDEY, RJ

STRADLING, RA

PEPPER, M

机构：

[1] UNIV OXFORD, CLARENDON LAB, OXFORD, ENGLAND

[2] UNIV CAMBRIDGE, CAVENDISH LAB, CAMBRIDGE, ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1974年 / 7卷 / 19期

关键词：

D O I：

10.1088/0022-3719/7/19/001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：L353 / L355

页数：3

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[2] PEAKED STRUCTURE IN FIELD-EFFECT MOBILITY OF SILICON MOS-TRANSISTORS AT VERY LOW-TEMPERATURES
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[3] ADMITTANCE STUDIES OF SURFACE QUANTIZATION IN [100]-ORIENTED SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
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