ADMITTANCE STUDIES OF SURFACE QUANTIZATION IN [100]-ORIENTED SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：37

作者：

VOSHCHENKOV, AM ^{[1
]}

ZEMEL, JN ^{[1
]}

机构：

[1] UNIV PENN, PHILADELPHIA, PA 19174 USA

来源：

PHYSICAL REVIEW B | 1974年 / 9卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.9.4410

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4410 / 4421

页数：12

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