ANDERSON TRANSITION IN SILICON INVERSION LAYERS

被引：33

作者：

POLLITT, S ^{[1
]}

PEPPER, M ^{[1
]}

ADKINS, CJ ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 OHE,ENGLAND

来源：

关键词：

D O I：

10.1016/0039-6028(76)90116-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：79 / 88

页数：10

共 19 条

[1] AMITAY M, 1966, J PHYS SOC JPN, VS 21, P549
[2] ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES
ANDERSON, PW
[J]. PHYSICAL REVIEW, 1958, 109 (05): : 1492 - 1505
[3] DISORDER-INDUCED CARRIER LOCALIZATION IN SILICON SURFACE INVERSION LAYERS
ARNOLD, E
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 705 - 707
[4] ELECTRONIC TRANSPORT IN EXPANDED LIQUID MERCURY
EVEN, U
JORTNER, J
[J]. PHYSICAL REVIEW B, 1973, 8 (06): : 2536 - 2545
[5] Friedman L., 1971, J NONCRYST SOLIDS, V6, P329
[6] HIGH-TEMPERATURE VARIABLE RANGE HOPPING CONDUCTIVITY IN SILICON INVERSION LAYERS
HARTSTEIN, A
FOWLER, AB
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (11): : L249 - L253
[7] HALL EFFECT IN IMPURITY CONDUCTION
HOLSTEIN, T
[J]. PHYSICAL REVIEW, 1961, 124 (05): : 1329 - &
[8] CONDUCTIVITY AND MOBILITY EDGES FOR 2-DIMENSIONAL DISORDERED SYSTEMS
LICCIARDELLO, DC
THOULESS, DJ
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (24): : 4157 - 4170
[9] MOTT N, 1973, ELECTRON POWER, V19, P321, DOI 10.1049/ep.1973.0382
[10] MOTT NF, 1961, ELECTRONIC PROCESSES, P181