RADIATION HARDNESS OF SI-SIO2 INTERFACE AND CARRIER LOCALIZATION IN INVERSION LAYER

被引：9

作者：

PEPPER, M ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1977年 / 10卷 / 16期

关键词：

D O I：

10.1088/0022-3719/10/16/002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：L445 / L450

页数：6

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