LOCALIZATION AND MINIMUM METALLIC CONDUCTIVITY IN SI INVERSION LAYERS

[1] DISORDER-INDUCED CARRIER LOCALIZATION IN SILICON SURFACE INVERSION LAYERS [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 705 - 707

[2] DEAL BE, 1974, J ELECTROCHEM SOC RE, V121, pC199

[3] BARRIER INHOMOGENEITIES ON A SI-SIO2 INTERFACE BY SCANNING INTERNAL PHOTOEMISSION [J]. APPLIED PHYSICS LETTERS, 1971, 19 (08) : 280 - &

[4] CONTROL OF FIXED CHARGE AT SI-SIO2 INTERFACE BY OXIDATION-REDUCTION TREATMENTS [J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 377 - 379

[5] SUBSTRATE BIAS EFFECTS ON ELECTRON-MOBILITY IN SILICON INVERSION LAYERS AT LOW-TEMPERATURES [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (01) : 15 - 17

[6] HARTSTEIN A, TO BE PUBLISHED

[7] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .9. MINIMUM METALLIC CONDUCTIVITY [J]. PHILOSOPHICAL MAGAZINE, 1972, 26 (04): : 1015 - &

[8] MOTT NF, TO BE PUBLISHED

[9] ANDERSON LOCALIZATION OF HOLES IN A SI INVERSION LAYER [J]. PHYSICS LETTERS A, 1974, A 48 (02) : 113 - 114

[10] VARIABLE-RANGE HOPPING IN A SILICON INVERSION LAYER [J]. PHYSICS LETTERS A, 1974, A 47 (01) : 71 - 72

[1] DISORDER-INDUCED CARRIER LOCALIZATION IN SILICON SURFACE INVERSION LAYERS [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 705 - 707

[2] DEAL BE, 1974, J ELECTROCHEM SOC RE, V121, pC199

[3] BARRIER INHOMOGENEITIES ON A SI-SIO2 INTERFACE BY SCANNING INTERNAL PHOTOEMISSION [J]. APPLIED PHYSICS LETTERS, 1971, 19 (08) : 280 - &

[4] CONTROL OF FIXED CHARGE AT SI-SIO2 INTERFACE BY OXIDATION-REDUCTION TREATMENTS [J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 377 - 379

[5] SUBSTRATE BIAS EFFECTS ON ELECTRON-MOBILITY IN SILICON INVERSION LAYERS AT LOW-TEMPERATURES [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (01) : 15 - 17

[6] HARTSTEIN A, TO BE PUBLISHED

[7] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .9. MINIMUM METALLIC CONDUCTIVITY [J]. PHILOSOPHICAL MAGAZINE, 1972, 26 (04): : 1015 - &

[8] MOTT NF, TO BE PUBLISHED

[9] ANDERSON LOCALIZATION OF HOLES IN A SI INVERSION LAYER [J]. PHYSICS LETTERS A, 1974, A 48 (02) : 113 - 114

[10] VARIABLE-RANGE HOPPING IN A SILICON INVERSION LAYER [J]. PHYSICS LETTERS A, 1974, A 47 (01) : 71 - 72