Preparation of Pb(Mg1/3Nb2/3)O-3-PbTiO3 thin films on silicon substrates by pulsed laser deposition

被引：28

作者：

Tantigate, C

Safari, A

机构：

[1] Department of Ceramic science and Engineering, Rutgers University, Piscataway

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 29卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00127-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin films of 0.9Pb(Mg1/3Nb2/3)O-3 - 0.1PbTiO(3) (PMN-PT) on Si substrates were prepared by pulsed laser deposition. La0.5Sr0.5CoO3 (LSCO) was used as bottom electrode and as a template layer to promote perovskite phase formation of PMN-PT thin films on Pt/Ti/SiO2/Si (100) substrates. Thin films of the pyrochlore phase were obtained on Pt layer, whereas, LSCO promoted perovskite phase formation. The microstructure of perovskite PMN-PT thin films showed a grain size of about 200 nm while the grain size of the pyrochlore phase was in the range of 10 - 20 nm. The films exhibited a high dielectric constant and low dissipation factor of about 4300 and 0.05, respectively, for a film approximately 0.5 mu m thick. The charge storage density of the film was about 100 fC/mu m(2) at 50 kV/cm.

引用

页码：115 / 118

页数：4

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