USE OF PHOTOEMISSION TO INVESTIGATE BAND STRUCTURE OF SILICON AND OTHER SEMICONDUCTORS

被引：6

作者：

SPICER, WE

SIMON, RE

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(62)90220-2

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1817 / &

共 18 条

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MARPLE, DTF
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[2] ELECTRON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON
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[3] CARDONA M, 1961, J APPL PHYS S, V32, P215
[4] WORK FUNCTION AND SORPTION PROPERTIES OF SILICON CRYSTALS
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[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1195 - 1202
[5] INTERBAND TRANSITIONS IN GROUPS 4, 3-5, AND 2-6 SEMICONDUCTORS
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[J]. PHYSICAL REVIEW LETTERS, 1962, 8 (02) : 59 - &
[6] GOBELI GW, IN PRESS
[7] OPTICAL CONSTANTS OF GERMANIUM IN THE REGION-1 TO 10 EV
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TAFT, EA
[J]. PHYSICAL REVIEW, 1959, 113 (04): : 1002 - 1005
[8] OPTICAL CONSTANTS OF SILICON IN THE REGION 1 TO 10 EV
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TAFT, EA
[J]. PHYSICAL REVIEW, 1960, 120 (01): : 37 - 38
[9] BAND STRUCTURE OF SILICON, GERMANIUM, AND RELATED SEMICONDUCTORS
PHILLIPS, JC
[J]. PHYSICAL REVIEW, 1962, 125 (06): : 1931 - &
[10] SCHEER JJ, 1960, PHILIPS RES REP, V15, P584