THE ELECTROPHYSICAL PROPERTIES OF SILICON-NITRIDE AT LOW-TEMPERATURES

被引：8

作者：

ASADULLAYEV, NA ^{[1
]}

BRANDT, NB ^{[1
]}

CHUDINOV, SM ^{[1
]}

KOZLOV, SN ^{[1
]}

CIRIC, I ^{[1
]}

机构：

[1] INST PHYS, YU-11011 BEOGRAD, YUGOSLAVIA

来源：

关键词：

D O I：

10.1063/1.338959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4566 / 4570

页数：5

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[4]

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[6] GAP STATES IN SILICON-NITRIDE [J].

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POWELL, MJ .

[7]

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[8]

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[9]

SHKLOVSKII BI, 1979, ELECTRONIC PROPERTIE

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