ANHARMONIC EFFECT ON THE THERMAL-PROPERTIES OF SI AND GE

[1] The heat capacity of silicon at low temperatures [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1930, 52 : 2301 - 2304

[2] MEASUREMENTS OF THERMAL-EXPANSION OF 6 OPTICAL-MATERIALS, FROM ROOM-TEMPERATURE TO 250-DEGREES-C [J]. APPLIED OPTICS, 1978, 17 (07): : 1152 - 1154

[3] LATTICE CONSTANTS + THERMAL EXPANSIVITIES OF SILICON + OF CALCIUM FLUORIDE BETWEEN 6 DEGREES + 322 DEGREES K [J]. JOURNAL OF CHEMICAL PHYSICS, 1964, 41 (08) : 2324 - &

[4] BELIN VM, 1968, SOV PHYS SOLID STATE, V10, P1226

[5] CALCULATION OF THERMAL EXPANSION OF GERMANIUM [J]. PHILOSOPHICAL MAGAZINE, 1964, 9 (101): : 755 - &

[6] THERMAL-EXPANSION DATA FOR EIGHT OPTICAL-MATERIALS FROM 60-K TO 300-K [J]. APPLIED OPTICS, 1977, 16 (12): : 3214 - 3217

[7] THERMAL EXPANSION OF GERMANIUM AND SILICON AT LOW TEMPERATURES [J]. PHILOSOPHICAL MAGAZINE, 1965, 12 (115) : 157 - +

[8] THERMODYNAMIC AND OPTICAL PROPERTIES OF GERMANIUM SILICON DIAMOND AND GALLIUM ARSENIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 88 (560P): : 463 - +

[9] SPECIFIC HEAT OF GERMANIUM BETWEEN 20-DEGREES-K AND 200-DEGREES-K [J]. JOURNAL OF CHEMICAL PHYSICS, 1952, 20 (06) : 972 - 976

[10] DETERMINATION OF THERMAL-EXPANSION OF PURE GE AND A MEASUREMENT OF DIFFERENTIAL THERMAL-EXPANSION OF A GE-GAAS THIN-LAYER COUPLE [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (07) : 3114 - &

[1] The heat capacity of silicon at low temperatures [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1930, 52 : 2301 - 2304

[2] MEASUREMENTS OF THERMAL-EXPANSION OF 6 OPTICAL-MATERIALS, FROM ROOM-TEMPERATURE TO 250-DEGREES-C [J]. APPLIED OPTICS, 1978, 17 (07): : 1152 - 1154

[3] LATTICE CONSTANTS + THERMAL EXPANSIVITIES OF SILICON + OF CALCIUM FLUORIDE BETWEEN 6 DEGREES + 322 DEGREES K [J]. JOURNAL OF CHEMICAL PHYSICS, 1964, 41 (08) : 2324 - &

[4] BELIN VM, 1968, SOV PHYS SOLID STATE, V10, P1226

[5] CALCULATION OF THERMAL EXPANSION OF GERMANIUM [J]. PHILOSOPHICAL MAGAZINE, 1964, 9 (101): : 755 - &

[6] THERMAL-EXPANSION DATA FOR EIGHT OPTICAL-MATERIALS FROM 60-K TO 300-K [J]. APPLIED OPTICS, 1977, 16 (12): : 3214 - 3217

[7] THERMAL EXPANSION OF GERMANIUM AND SILICON AT LOW TEMPERATURES [J]. PHILOSOPHICAL MAGAZINE, 1965, 12 (115) : 157 - +

[8] THERMODYNAMIC AND OPTICAL PROPERTIES OF GERMANIUM SILICON DIAMOND AND GALLIUM ARSENIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 88 (560P): : 463 - +

[9] SPECIFIC HEAT OF GERMANIUM BETWEEN 20-DEGREES-K AND 200-DEGREES-K [J]. JOURNAL OF CHEMICAL PHYSICS, 1952, 20 (06) : 972 - 976

[10] DETERMINATION OF THERMAL-EXPANSION OF PURE GE AND A MEASUREMENT OF DIFFERENTIAL THERMAL-EXPANSION OF A GE-GAAS THIN-LAYER COUPLE [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (07) : 3114 - &